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 1N4148/1N4448/1N914B 500mW High Speed Switching Diode
Small Signal Diode
DO-35 Axial Lead HERMETICALLY SEALED GLASS
Features
Fast switching device(Trr<4.0nS) Through-hole device type mounting Moisture sensitivity level 1 Solder hot dip Tin(Sn) lead finish Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable A
D C
B
Mechanical Data
Case : DO-35 package (SOD-27) High temperature soldering guaranteed : 260C/10s Polarity : Indicated by cathode band Weight : 109 4 mg
Dimensions A B C D
Unit (mm) Min 0.45 3.05 25.4 1.53 Max 0.55 5.08 38.1 2.28
Unit (inch) Min Max 0.018 0.022 0.120 0.200 1.000 1.500 0.060 0.090
Ordering Information
Part No. 1Nxxxx A0 1Nxxxx R0 Package DO-35 DO-35 Packing 5Kpcs / Ammo 10Kpcs / 14" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Power Dissipation Repetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current Pulse Width 8.3ms Non-Repetitive Peak Forward Current Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol PD VRRM IFSM IFM IO RJA TJ, TSTG Value 500 100 2.0 450 150 240 -65 to + 150 Units mW V A mA mA C/W C
Electrical Characteristics
Type Number Reverse Breakdown Voltage Forward Voltage 1N4448, 1N914B 1N4148 1N4448, 1N914B Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) IF=5.0mA IF=10.0mA IF=100.0mA VR=20V VR=75V VR=0, f=1.0MHz IR CJ Trr VF 0.62 0.72 1.0 1.0 25 5.0 4.0 4.0 nA A pF ns V IR=100uA IR=5uA Symbol V(BR) Min 100 75 Max Units V
Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100, IRR=1mA
Version : C09
1N4148/1N4448/1N914B 500mW High Speed Switching Diode
Small Signal Diode Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1 100
FIG 2 Reverse Current vs Reverse Voltage
Reverse Current (uA)
Forward Current (A)
10
Ta=25C
0.1
Ta=25C
1
0.01
0.1
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01 0 20 40 60 80 100 120
Forward Voltage (V)
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
500 1.5
FIG 4 Typical Junction Capacitance
Junction Capacitance (pF)
0 25 50 75 100 125 150 175 200
Power Dissipation (mW)
400 300 200 100 0
1.2 0.9 0.6 0.3 0 0 5 10 15 20 25 30
Ambient Temperature (C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
10000
Dynamic Forward Resistance ()
1000
100
10
1 0 0
Forward Current (mA)
1
10
100
Version : C09


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